Complementary Junction Field-Effect Transistor

Three Studies Target Bottlenecks in Chip Interconnects, SiC Circuits, and In-Memory Computing

Recent research from universities in Singapore, Japan, and South Korea examines three chip technologies: an ultrathin carbon layer for insulating copper interconnects, SiC transistors operating at more than 600 degrees Celsius, and an insulating structure that improves the reliability of vertical-channel transistors used in in-memory computing.