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Recent research from universities in Singapore, Japan, and South Korea examines three chip technologies: an ultrathin carbon layer for insulating copper interconnects, SiC transistors operating at more than 600 degrees Celsius, and an insulating structure that improves the reliability of vertical-channel transistors used in in-memory computing.
The bottleneck in AI data centers is shifting from accelerator capabilities alone to the entire power-conversion chain, from the medium-voltage AC grid to the sub-one-volt power rails inside chips. The 800VDC architecture, along with solid-state transformers, SiC and GaN materials, and PMICs, is emerging as a way to reduce conversion stages, thermal losses, and copper consumption, but it introduces new safety, design, and operational requirements.