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Recent research presents three pathways for improving gallium nitride-based power electronics and communications: a transistor that withstands nearly 4 kilovolts, a low-resistance p-GaN junction, and the integration of GaN transistors into a diamond layer for heat dissipation.
The bottleneck in AI data centers is shifting from accelerator capabilities alone to the entire power-conversion chain, from the medium-voltage AC grid to the sub-one-volt power rails inside chips. The 800VDC architecture, along with solid-state transformers, SiC and GaN materials, and PMICs, is emerging as a way to reduce conversion stages, thermal losses, and copper consumption, but it introduces new safety, design, and operational requirements.