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imec presented two modules to improve the manufacturability of CFET transistors: a backside-contact structure that increased drive current and reduced access resistance to the bottom devices, and a dipole-middle gate structure for tuning threshold voltage within a suitable thermal budget. The results represent research progress, but do not yet demonstrate CFET readiness for large-scale commercial production.
The semiconductor industry is preparing to transition to three-dimensional CFET transistors, which place nFET and pFET transistors on top of one another to increase density and performance. However, their success will depend on interconnect precision, defect control, and warpage. Intel, TSMC, Samsung, and IBM are pursuing different manufacturing approaches, with growing reliance on multiphysics simulation and virtual manufacturing.